1993
8.
A JFET with the following parameters
is used in a single stage common source amplifier with a load resistance of 100
kΩ.
Calculate the high frequency cutoff (upper 3dB frequency) of the amplifier.
Given gm = 2 mA/V, Cgd = 2 pF, Cds = 2 pF, rd
= 100 kΩ
and Cgs = 1 pF.
1994
13. In the MOSFET amplifier shown in the figure below, the
transistor has µ = 50, rd = 10 kΩ, Cgs = 5 pF, Cgd
= 1 pF and Cds = 2 pF.
Draw a small signal equivalent
circuit for the amplifier for mid band calculate its mid band voltage gain.
1995
16. In the JFET circuit shown, assume that R1//R2
= 1 MΩ
and the total stray capacitance at the output to be 20 pF.
Determine the upper cutoff frequency of the amplifier.
1998
4.
From a measurement of the rise time
of the output pulse of an amplifier, whose input is a small amplitude square
wave, one can estimate the following parameter of the amplifier
a.
Gain-bandwidth product
b. Slew rate
c.
Upper 3 dB frequency
d. Lower 3 dB frequency
Answer: C
Solution : https://www.youtube.com/watch?v=1-COkXWLdJ0
13. In the MOSFET amplifier of the figure, the signal output V1
and V2 obey the relationship
1999
28. A JFET having µ = 50 and rd = 10 kΩ is used in a common source configuration as
shown. The JFET capaciances are Cgs = 5 pF, Cgd = 2 pF
and Cds = 2 pF.
Determine the ac small signal mid band voltage
gain (Vo/Vs) and the upper 3 dB frequency of the circuit.
2002
6.
The voltage gain Av = Vo/Vi
of the JFET amplifier shown in the figure is IDSS = 10 mA, VP
= 5 volts. Assume C1, C2 and Cs to be very
large.
a.
+ 16
b.
– 16
c.
+ 8
d.
– 6
Answer: D
2005
Common Data Questions for 11, 12 and
13:
Given rd = 20 KΩ,
IDSS = 10 mA, VP = - 8 volts.
11.
Zi and Zo of
the circuit are respectively
a.
2 MΩ
and 2 KΩ
b.
2 MΩ and 20/11 KΩ
c.
Infinity and 2 KΩ
d.
Infinity and 20/11 KΩ
Answer: B
12. ID and VDS under DC conditions are
respectively
a.
5.625 mA and 8.75 Volts
b.
7.50 mA and 5.0 Volts
c.
4.50 mA and 11.0 Volts
d.
6.25 mA and 7.5 Volts
Answer: A
13. Transconductance in milli-siemens (mS) and the voltage gain
of the amplifier are
a.
1.875 mS and 3.41
b.
1.875 mS and – 3.41
c.
3.30 mS and – 6
d.
3.30 mS and 6
Answer: B
2013
3.
The small signal resistance (ie. dVB/dID)
in KΩ
offered by the n – channel MOSFET M shown in the figure below, at a bias point
of VB = 2 volts is (device data for M: device Transconductance
parameter KN = µNCOX(W/L) = 40 µA/V2, threshold voltage VTN
= 1 volt, and neglecting body effect and channel length modulation effects)
a.
12.5
b.
25
c.
50
d.
100
Answer: B
4.
The ac schematic of an NMOS common
source stage is shown in the figure below, where part of the biasing circuit
has been omitted for simplicity. For the n – channel MOSFET M, the
Transconductance gm = 1 mA/V and body effect and channel length modulation effect
are to be neglected. The lower cutoff frequency in Hz of the circuit
approximately at
a.
8
b.
32
c.
50
d.
200
Answer: A
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