Practice Problems

Practice Problems for GATE (Topic wise)




Electron Devices
Analog Circuits
Digital Circuits
Semiconductors

1. Intrinsic

2. Extrinsic 

3. Hall Effect 
BJT Small Signal Analysis
Number Systems
PN junction (Diode)

Set -  1

Set -  2

Set -  3
BJT High Frequency Analysis
Logic Gates
Zener Diode
FET Amplifiers
Combinational Circuits
BJT
Multistage Amplifiers
Multiplexer
JFET
Negative Feedback Amplifiers
Sequential Circuits
MOSFET
Operational Amplifiers
Memories
VLSI
Power Amplifiers
ADC & DAC
Special Purpose Diodes
Tuned Amplifiers
Microprocessors
Transistor Biasing
Oscillators
 Logic Families
 

Reference Books for Electron Devices:
1. EDC by Millman (Black Pad)
2. EDC by Bogart
3. Microelectronics by Sedra & Smith
4. Solid State Electronic Devices by Streetman
5. Semiconductor Physics & Devices by Donald Neamen

Reference Books for Analog Circuits:
1. Microelectronics by Sedra & Smith
2. Integrated Electronics by Millman (Yellow Pad)
3. EDC by Bogart
4. Electronic Circuit Analysis & Design by Donald Neamen
5. Electronic Circuits by Schilling & Belove

Reference Books for Digital Circuits: 
1. Digital Electronics by R.P. Jain
2. Digital Design by Morris Mano
3. Solutions to Digital Electronics by R.P. Jain
4. Digital Systems by Tocci
5. Digital Fundamentals by Floyd

7 comments:

  1. UnknownFebruary 11, 2019 at 12:58 PM

    check out here for isro previous year question if any one BARC question paper if possible to send me aakashvrm879@gmail.com

    ReplyDelete
  2. Gate ECE AspirantsJanuary 13, 2020 at 10:22 AM

    Practice Topicwise Gate ECE Questions from https://academyera.com/gate-questions-for-ece

    ReplyDelete
  3. chrisJuly 15, 2020 at 4:02 PM

    A long-channel n-channel enhancement-mode MOSFET has threshold voltage VT= 0.5 V, process transconductance parameter kn′= 0.2 mA/V2.
    a) Sketch the drain current vs. gate voltage (IDS vs. VGS) characteristic for 0 ≤ VGS ≤5 V, VDS= 0.5 V.
    b) Sketch the drain current vs. drain voltage (IDS vs. VDS) characteristics for 0 ≤ VDS ≤5 V,
    for VGS= 0 V, 1 V, 2, V, 3 V, 4 V, and 5 V.
    c) For each set of voltages below, state the region of operation and compute the drain current:
    i) VGS= 1 V and VDS= 5 V
    ii) VGS= 1 V and VDS= 0.5 V
    iii) VGS= 0 V and VDS= 5 V

    ReplyDelete
  4. UnknownDecember 22, 2020 at 10:42 PM

    Sketch the root locus of the following unity feedback system with K G(s) = %3D s(s + 2)(s + 2s + 4) (a) Find the value of K at breakaway points (b) Find the value of K and the closed loop poles at which the damping factor is 0.6.

    ReplyDelete
    Replies
    1. UnknownJune 17, 2021 at 9:57 AM

      (a) Find the K value using 'magnitude condition'
      i.e. |G(s)H(s)| at s=BP (or any point in Root Locus) is equal to 1
      (b) This one is a bit complicated to type but cos(theta) =£ theta being angle with -ve real axis .This will cut Root Locus at a point which is the required point at which K is to be calculated.
      Using formula: K =(product of distances from point to poles)/(distances from point to zeros)

      Delete
  5. UnknownJanuary 16, 2022 at 7:32 PM

    Where to find solution of practice problems?

    ReplyDelete

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