GATE 2023 - Important Concepts, Short cuts, Complete Solutions, Examples and Practice Problems: GATE 2010

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GATE 2010 ECE Network Theory - Complete Video Solutions with Answers

2010

1. For the two-port network shown below, the short-circuit admittance parameter matrix is

Solution: https://www.youtube.com/watch?v=IGYPN1wEH2I

2. For parallel RLC circuit, which one of the following statements is NOT correct?
a) The bandwidth of the circuit decreases if R is increased
b) The bandwidth of the circuit remains same if L is increased
c) At resonance, input impedance is a real quantity
d) At resonance, the magnitude of input impedance attains its minimum value.

Solution: https://www.youtube.com/watch?v=wPSqMuj0YhY

3. In the cirucit shown, the switch S is open for a long time and is closed at t = 0. The current i(t) for t ≥ 0⁺ is

Solution: https://www.youtube.com/watch?v=1oztLmwhBL0

4. The current I in the circuit shown is

a) - j1 A

b) j1 A

c) 0 A

d) 20 A

Solution: https://www.youtube.com/watch?v=dKZILrD0vOM

5. In the circuit shown, the power supplied by the voltage source is

a) 0 W

b) 5 W

c) 10 W

d) 100 W

Solution: https://www.youtube.com/watch?v=hibsYBmkeSw

GATE 2010 ECE Control Systems - Complete Video Solutions with Answers

2010

1. The transfer function Y(s)/R(s) of the system shown is

Answer:B

Solution : https://www.youtube.com/watch?v=ORTP8lmNl44

2. A system with transfer function Y(s)/X(s) = s/(s + p) has an output y(t) = cos(2t – π/3) for the input signal x(t) = p cos(2t – π/2). Then, the system parameter 'p' is

a) √3

b) 2/√3

c) 1

d) √3/2

Answer:B

Solution : https://www.youtube.com/watch?v=3WAIkGRRes4

3. For the asymptotic bode magnitude plot shown below, the system transfer function can be

Solution : https://www.youtube.com/watch?v=Tt58Wfn-dsQ

4. Given f(t) = L^–1[(3s + 1) / (s³ + 4s² + (k-3)s)]. If Lim_{t
-> ∞} f(t) = 1, then the value of k is

a) 1

b) 2

c) 3

d) 4

Solution : https://www.youtube.com/watch?v=q65ZfJH4Ww0

5. A unity negative feedback closed loop system has a plant with the transfer function G(s) = 1/(s² + 2s + 2) and a controller G_c(s) in the feed forward path. For a unit step input, the tranfer function of the controller that gives minimum steady state error is

Solution : https://www.youtube.com/watch?v=zdwjtNkiBxg

Common Data Questions:

The signal flow graph of a system is shown below.

6. The state variable representation of the system can be

Solution : https://www.youtube.com/watch?v=-4PqIhkiPD0

7. The transfer function of the system is

Solution : https://www.youtube.com/watch?v=kT5TsnSEl9g

GATE 2010 ECE Video Solutions on Analog Circuits (Analog Electronics)

1. The amplifier circuit shown below uses a silicon transistor. The capacitors C_C and C_E can be assumed to be short at signal frequency and effect of output resistance r_o can be ignored. If C_E is disconnected from the circuit, which one of the following statements is TRUE.

a. The input resistance R_i increases and magnitude of voltage gain A_V decreases
b. The input resistance R_i decreases and magnitude of voltage gain A_V increases
c. The input resistance R_i decreases and magnitude of voltage gain A_V decreases
d. The input resistance R_i increases and magnitude of voltage gain A_V increases

Solution: https://www.youtube.com/watch?v=E48_Y4CYKIU

2. In the silicon BJT circuit shown below, assume that the emitter area of transistor Q₁ is half that of transistor Q₂. The value of current I_o is approximately

a. 0.5 mA
b. 2 mA
c. 9.3 mA
d. 15 mA

Solution: https://www.youtube.com/watch?v=jWdra3gmHK0

3. Assuming the OP-AMP is ideal, the voltage gain of the amplifier shown below is

a. - R₂/R₁
b. - R₃/R₁
c. - (R₂ || R₃) / R₁
d. - (R₂ + R₃)/R₁

Solution: https://www.youtube.com/watch?v=-GMfvkT72y0

4. The transfer characteristic for the precision rectifier circuit shown below is (Assume ideal OP-AMP and Practical Diodes)

Solution: https://www.youtube.com/watch?v=K2Rp0dv6Ll0

Common Data Questions:
Consider the common emitter amplifier shown below with the following circuit parameters.
β = 100, g_m = 0.3861 A/V, r_o = 259 Ω, R_S = 1 KΩ, R_B = 93 KΩ, R_C = 250 Ω, R_L = 1 KΩ, C₁ = ∞ and C₂ = 4.7 µF.

5. The resistance seen by the source V_S is
a. 258 Ω
b. 1258 Ω
c. 93 KΩ
d. ∞

6. The lower cutoff frequency due to C₂ is
a. 33.9 Hz
b. 27.1 Hz
c. 13.6 Hz
d. 16.9 Hz

Solution: https://www.youtube.com/watch?v=FdpAV2BR7Fc

GATE 2010 ECE Video Solution on Digital Circuits (Digital Electronics)

1. Match the logic gates in Column A with their equivalents in Column B.

a. P – 2, Q – 4, R – 1, S – 3
b. P – 4, Q – 2, R – 1, S – 3
c. P – 2, Q – 4, R – 3, S – 1
d. P – 4, Q – 2, R – 3, S – 1

Solution : https://www.youtube.com/watch?v=dkREztdPw8E

2. For the output F to be 1 in the logic circuit shown, the input combination should be

a. A = 1, B = 1, C = 0
b. A = 1, B = 0, C = 0
c. A = 0, B = 1, C = 0
d. A = 0, B = 0, C = 1

Solution : https://www.youtube.com/watch?v=pQAOPtOwtBk

3. In the circuit shown, the device connected to Y5 can have address in the range

a. 2000 – 20FF
b. 2D00 – 2DFF
c. 2E00 – 2EFF
d. FD00 – FDFF

Solution : https://www.youtube.com/watch?v=5P58M5A7t2U

4. Assuming that all flip-flops are in reset condition initially, the count sequence observed at Q_A in the circuit shown is

a. 0010111….
b. 0001011….
c. 0101111….
d. 0110100….

Solution : https://www.youtube.com/watch?v=UsicxIAMqx0

5. The Boolean function realized by the logic circuit shown is

a. F = ∑m(0,1,3,5,9,10,14)
b. F = ∑m(2,3,5,7,8,12,13)
c. F = ∑m(1,2,4,5,11,14,15)
d. F = ∑m(2,3,5,7,8,9,12)

Solution : https://www.youtube.com/watch?v=pOgzYeepujg

6. For the 8085 assembly language program given below, the content of the accumulator after the execution of the program is

3000   MVI A, 45H
3002   MOV B, A
3003   STC
3004   CMC
3005   RAR
3006   XRA B

a. 00H
b. 45H
c. 67H
d. E7H

Solution : https://www.youtube.com/watch?v=NSdbNs_Oiwk

GATE 2010 ECE Video Solutions on EDC (Electronic Devices and Circuits)

1. At room temperature, a possible value for the mobility of electrons in the inversion layer of a silicon N channel MOSFET is (in cm²/volt-sec)
a. 450
b. 1350
c. 1800
d. 3600

Solution : https://www.youtube.com/watch?v=bXxmszDCh1U

2. The gate oxide in a CMOS process is preferably grown using
a. Wet oxidation
b. Dry oxidation
c. Epitaxial deposition
d. Ion implantation

Solution : https://www.youtube.com/watch?v=7bi7sXWZYEc

3. In a uniformly doped BJT, assume that N_E, N_B and N_C are the emitter, base and collector doping in atoms/cm3 respectively. If the emitter injection efficiency of the BJT is close to unity, which of the following conditions is TRUE?
a. N_E = N_B = N_C
b. N_E >> N_B and N_B > N_C
c. N_E = N_B and N_B < N_C
d. N_E < N_B < N_C

Solution : https://www.youtube.com/watch?v=rGDV4GYPQaQ

4. Compared to a PN junction with N_D=N_A=10¹⁴ per cm³, which one of the following statements is TRUE for a PN junction with N_A=N_D=10²⁰ per cm³?
a. Reverse breakdown voltage is lower and depletion capacitance is lower
b. Reverse breakdown voltage is higher and depletion capacitance is lower
c. Reverse breakdown voltage is lower and depletion capacitance is higher
d. Reverse breakdown voltage is higher and depletion capacitance is higher

Solution : https://www.youtube.com/watch?v=wEzN6onF2AA

5. Linked Answer Question:
The silicon sample with unit cross sectional area shown below is in thermal equilibrium. The following information is given:
T = 300^oK
Electron charge = 1.6x10^-19 C
Thermal voltage = 26 mV
Electron mobility = 1350 cm²/volt-sec

i. The magnitude of the electric field at x = 0.5 µm is
a. 1 KV/cm
b. 5 KV/cm
c. 10 KV/cm
d. 26 KV/cm

ii. The magnitude of the electron drift current density at x = 0.5 µm is
a. 2.16x10⁴ A/cm²
b. 1.08x10⁴ A/cm²
c. 4.32x10³ A/cm²
d. 6.48x10² A/cm²

Solution : https://www.youtube.com/watch?v=jLAgBiAE4so

GATE 2010 ECE Network Theory - Complete Video Solutions with Answers

GATE 2010 ECE Control Systems - Complete Video Solutions with Answers

GATE 2010 ECE Video Solutions on Analog Circuits (Analog Electronics)

GATE 2010 ECE Video Solution on Digital Circuits (Digital Electronics)

GATE 2010 ECE Video Solutions on EDC (Electronic Devices and Circuits)

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